IRFS3307TRLPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 75V 120A D2PAK
$4.20
Available to order
Reference Price (USD)
800+
$2.12760
1,600+
$2.00040
2,400+
$1.91136
5,600+
$1.84777
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IRFS3307TRLPBF by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IRFS3307TRLPBF ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.3mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Nexperia USA Inc.
PMV25ENEAR
IXYS
IXTH30N60P
Vishay Siliconix
SI7463DP-T1-GE3
Infineon Technologies
SPD07N60C3ATMA1
Taiwan Semiconductor Corporation
TSM2N60ECP ROG
Vishay Siliconix
SUM60N10-17-E3
Infineon Technologies
IRF60DM206
Renesas Electronics America Inc
2SJ128-AZ
Alpha & Omega Semiconductor Inc.
AOW360A70
Vishay Siliconix