IXTA130N15X4-7
IXYS
IXYS
MOSFET N-CH 150V 130A TO263-7
$11.66
Available to order
Reference Price (USD)
1+
$11.66000
500+
$11.5434
1000+
$11.4268
1500+
$11.3102
2000+
$11.1936
2500+
$11.077
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IXTA130N15X4-7 by IXYS. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IXTA130N15X4-7 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7 (IXTA)
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Related Products
Vishay Siliconix
SIA485DJ-T1-GE3
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJB200G06B-F2-0000HF
IXYS
IXTA10P50P
Texas Instruments
TPS1101PWR
Fairchild Semiconductor
FQA13N50CF
Infineon Technologies
IPN60R600P7SATMA1
Infineon Technologies
IPP034N03LG
onsemi
NVD5C460NT4G
Fairchild Semiconductor
FDG314P
Toshiba Semiconductor and Storage