IXTF1N450
IXYS
IXYS
MOSFET N-CH 4500V 900MA I4PAC
$99.34
Available to order
Reference Price (USD)
1+
$44.03000
25+
$38.08000
100+
$35.70000
Exquisite packaging
Discount
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IXTF1N450 by IXYS is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IXTF1N450 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 4500 V
- Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS i4-PAC™
- Package / Case: i4-Pac™-5 (3 Leads)
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