SSM3J35CTC,L3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 250MA CST3C
$0.36
Available to order
Reference Price (USD)
10,000+
$0.04250
30,000+
$0.04000
50,000+
$0.03750
100,000+
$0.03500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SSM3J35CTC,L3F by Toshiba Semiconductor and Storage. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SSM3J35CTC,L3F inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: CST3C
- Package / Case: SC-101, SOT-883
Related Products
Diodes Incorporated
DMN2450UFB4-7B
STMicroelectronics
STF6N65M2
Panjit International Inc.
PJD45N06A_L2_00001
STMicroelectronics
STL45N10F7AG
onsemi
FDMS8050ET30
Diodes Incorporated
ZXMN3A03E6TA
Infineon Technologies
IRFR540ZTRLPBF
NXP USA Inc.
BUK6228-55C,118
Panjit International Inc.
PJQ4460AP-AU_R2_000A1
Diodes Incorporated