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IXTN120P20T

IXYS
IXTN120P20T Preview
IXYS
MOSFET P-CH 200V 106A SOT227B
$57.73
Available to order
Reference Price (USD)
10+
$36.45100
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 830W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC

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