IXTQ60N20L2
IXYS
IXYS
MOSFET N-CH 200V 60A TO3P
$18.96
Available to order
Reference Price (USD)
1+
$12.98000
30+
$10.91500
120+
$10.03000
510+
$8.55500
1,020+
$8.26000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IXTQ60N20L2, a premium Transistors - FETs, MOSFETs - Single from IXYS. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IXTQ60N20L2 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 540W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
Related Products
Vishay Siliconix
IRF610PBF
Diodes Incorporated
DMP1011UCB9-7
Micro Commercial Co
BSS84KW-TP
Nexperia USA Inc.
PSMN8R5-40MLDX
IXYS
IXFN110N60P3
onsemi
NTMFS4C10NT1G-001
IXYS
IXTX5N250
Vishay Siliconix
SI1411DH-T1-GE3
IXYS
IXFA24N60X
Toshiba Semiconductor and Storage