NE55410GR-T3-AZ
Renesas Electronics America Inc
Renesas Electronics America Inc
RF POWER N-CHANNEL, MOSFET
$4.82
Available to order
Reference Price (USD)
1+
$4.82000
500+
$4.7718
1000+
$4.7236
1500+
$4.6754
2000+
$4.6272
2500+
$4.579
Exquisite packaging
Discount
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For mission-critical RF amplification, choose Renesas Electronics America Inc's NE55410GR-T3-AZ MOSFETs. Combining silicon carbide (SiC) robustness with precision matching networks, they outperform in avionics and marine navigation systems. Extended lifecycle ratings reduce total cost of ownership. Your perfect component awaits click inquire to connect with our technical specialists!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.14GHz
- Gain: 13.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): 250mA, 1A
- Noise Figure: -
- Current - Test: 20 mA
- Power - Output: 35.4dBm
- Voltage - Rated: 65 V
- Package / Case: 16-DFF, Exposed Pad
- Supplier Device Package: 16-HTSSOP
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