RN2704,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PNPX2 BRT Q1BSR22KOHM Q1BER22KOH
$0.05
Available to order
Reference Price (USD)
1+
$0.05364
500+
$0.0531036
1000+
$0.0525672
1500+
$0.0520308
2000+
$0.0514944
2500+
$0.050958
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic designs with Toshiba Semiconductor and Storage's RN2704,LF BJT Array solution, offering pre-configured biasing for immediate implementation. These transistor arrays excel in switching and linear applications where space and efficiency are critical. The product series demonstrates superior characteristics: thermal shutdown protection, high-frequency response, and ESD protection for durable performance. Commonly deployed in battery-powered devices, motor controllers, and audio amplifiers across multiple industries. Toshiba Semiconductor and Storage combines decades of semiconductor experience with cutting-edge manufacturing techniques. Don't compromise on quality request samples or volume pricing for RN2704,LF through our quick inquiry system!
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
Related Products
Nexperia USA Inc.
PRMH2Z
Toshiba Semiconductor and Storage
RN2908,LF(CT
Diodes Incorporated
DCX114EU-7-F
Nexperia USA Inc.
PBLS6021D,115
Toshiba Semiconductor and Storage
RN2965(TE85L,F)
onsemi
SMUN5232DW1T1G
Toshiba Semiconductor and Storage
RN2703JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2901FE,LXHF(CT
onsemi
NSBC123JPDXV6T1G
Nexperia USA Inc.