PUMH7,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V 6TSSOP
$0.30
Available to order
Reference Price (USD)
3,000+
$0.05727
6,000+
$0.04980
15,000+
$0.04233
30,000+
$0.03984
75,000+
$0.03735
150,000+
$0.03486
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with Nexperia USA Inc.'s PUMH7,115 Pre-Biased BJT Arrays the perfect solution for space-constrained applications. These discrete semiconductor products deliver optimized performance with built-in bias resistors, simplifying your PCB layout while ensuring stable operation. Key features include high current gain, low leakage current, and excellent temperature characteristics. Widely used in LED drivers, interface circuits, and logic level conversion across telecom, automation, and IoT devices. Trust Nexperia USA Inc.'s expertise in transistor technology for your next project. Ready to order or need technical support? Send us your inquiry today!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
Related Products
onsemi
EMF18XV6T5G
onsemi
MUN5215DW1T1G
Rohm Semiconductor
EMD30T2R
NXP USA Inc.
PBLS2001S,115
onsemi
NSVMUN531335DW1T1G
Toshiba Semiconductor and Storage
RN1911FE,LF(CT
Nexperia USA Inc.
NHUMH2X
Nexperia USA Inc.
PEMH19,115
Nexperia USA Inc.
PEMH13,115
Infineon Technologies