NTB6413ANT4G
onsemi
onsemi
MOSFET N-CH 100V 42A D2PAK
$2.19
Available to order
Reference Price (USD)
800+
$1.11928
1,600+
$1.02718
2,400+
$0.95634
5,600+
$0.92092
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
NTB6413ANT4G by onsemi is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, NTB6413ANT4G ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 28mOhm @ 42A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
IRF8714TRPBF
Fairchild Semiconductor
FDZ206P
Alpha & Omega Semiconductor Inc.
AON2240
Toshiba Semiconductor and Storage
TJ15S06M3L(T6L1,NQ
Infineon Technologies
BSC094N06LS5ATMA1
Toshiba Semiconductor and Storage
TK5A65W,S5X
Infineon Technologies
IAUZ20N08S5L300ATMA1
onsemi
NVBG020N120SC1
Microchip Technology
APT10045JFLL
Texas Instruments