NVBG020N120SC1
onsemi
onsemi
MOSFET N-CH 1200V 8.6A/98A D2PAK
$45.22
Available to order
Reference Price (USD)
1+
$45.22000
500+
$44.7678
1000+
$44.3156
1500+
$43.8634
2000+
$43.4112
2500+
$42.959
Exquisite packaging
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Upgrade your electronic designs with NVBG020N120SC1 by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, NVBG020N120SC1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
- Vgs (Max): +25V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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