TJ15S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 60V 15A DPAK
$0.54
Available to order
Reference Price (USD)
2,000+
$0.49000
Exquisite packaging
Discount
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Experience the power of TJ15S06M3L(T6L1,NQ, a premium Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, TJ15S06M3L(T6L1,NQ is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Vgs (Max): +10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 41W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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