NTD4810NH-1G
onsemi
onsemi
MOSFET N-CH 30V 9A/54A IPAK
$0.14
Available to order
Reference Price (USD)
1+
$0.14000
500+
$0.1386
1000+
$0.1372
1500+
$0.1358
2000+
$0.1344
2500+
$0.133
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with NTD4810NH-1G, a premium Transistors - FETs, MOSFETs - Single from onsemi. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust NTD4810NH-1G for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
onsemi
NVLUS4C12NTAG
Vishay Siliconix
SI4190ADY-T1-GE3
Vishay Siliconix
SQ1431EH-T1_GE3
Infineon Technologies
AUIRFR2905Z
NXP USA Inc.
BUK652R1-30C,127
Alpha & Omega Semiconductor Inc.
AOB11S65L
Infineon Technologies
IRF6641TRPBF
Texas Instruments
CSD23280F3
NTE Electronics, Inc
NTE2381
Diodes Incorporated