PMN38EN,135
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 30V 5.4A 6TSOP
$0.12
Available to order
Reference Price (USD)
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$0.12000
500+
$0.1188
1000+
$0.1176
1500+
$0.1164
2000+
$0.1152
2500+
$0.114
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Discover PMN38EN,135, a versatile Transistors - FETs, MOSFETs - Single solution from NXP USA Inc., a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.75W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-74
- Package / Case: SC-74, SOT-457
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