PSMN6R0-25YLDX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 25V 61A LFPAK56
$0.86
Available to order
Reference Price (USD)
1,500+
$0.24871
3,000+
$0.22677
7,500+
$0.21213
10,500+
$0.19750
37,500+
$0.18726
Exquisite packaging
Discount
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Discover PSMN6R0-25YLDX, a versatile Transistors - FETs, MOSFETs - Single solution from Nexperia USA Inc., a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 43W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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