RGTVX2TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
650V 60A FIELD STOP TRENCH IGBT
$8.05
Available to order
Reference Price (USD)
1+
$8.05000
500+
$7.9695
1000+
$7.889
1500+
$7.8085
2000+
$7.728
2500+
$7.6475
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RGTVX2TS65DGC11 Single IGBT by Rohm Semiconductor sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Rohm Semiconductor for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 111 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
- Power - Max: 319 W
- Switching Energy: 2.08mJ (on), 1.15mJ (off)
- Input Type: Standard
- Gate Charge: 123 nC
- Td (on/off) @ 25°C: 49ns/150ns
- Test Condition: 400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
Related Products
STMicroelectronics
STGFW20V60F
Infineon Technologies
AIKW50N65DF5XKSA1
Infineon Technologies
IKD15N60RBTMA1
Harris Corporation
HGT1S12N60B3S
IXYS
IXYX120N120C3
Fairchild Semiconductor
ISL9V3036S3ST
STMicroelectronics
STGP20NC60V
STMicroelectronics
STGW30H60DFB
IXYS
IXGH30N60C3D1
onsemi