RJH60D7DPQ-E0#T2
Renesas Electronics America Inc

Renesas Electronics America Inc
IGBT, 90A, 600V, N-CHANNEL
$9.32
Available to order
Reference Price (USD)
1+
$6.76000
10+
$6.04000
25+
$5.43560
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize energy efficiency with RJH60D7DPQ-E0#T2 Single IGBTs by Renesas Electronics America Inc, a trusted name in discrete semiconductors. Suitable for solar inverters, motor controllers, and more, these transistors feature low conduction loss and high switching frequency. Their robust design ensures long-term performance even in harsh environments. Choose RJH60D7DPQ-E0#T2 for your next project and experience the Renesas Electronics America Inc difference. Submit your inquiry today for expert assistance!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 90 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
- Power - Max: 300 W
- Switching Energy: 1.1mJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 130 nC
- Td (on/off) @ 25°C: 60ns/190ns
- Test Condition: 300V, 50A, 5Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247