RM110N150HD
Rectron USA
Rectron USA
MOSFET N-CH 150V 113A TO263-2
$1.44
Available to order
Reference Price (USD)
1+
$1.44000
500+
$1.4256
1000+
$1.4112
1500+
$1.3968
2000+
$1.3824
2500+
$1.368
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with RM110N150HD, a premium Transistors - FETs, MOSFETs - Single from Rectron USA. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust RM110N150HD for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4362 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 273W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Toshiba Semiconductor and Storage
TK6R8A08QM,S4X
Rectron USA
RM15N650T2
Rohm Semiconductor
R6524KNX3C16
Vishay Siliconix
SIHH240N60E-T1-GE3
Infineon Technologies
IRFR3303TRPBF
Taiwan Semiconductor Corporation
TSM80N400CF C0G
Vishay Siliconix
SIB406EDK-T1-GE3
Nexperia USA Inc.
BUK9M9R1-40EX
onsemi
SVD5865NLT4G
Fairchild Semiconductor