RS1E260ATTB1
Rohm Semiconductor
Rohm Semiconductor
MOSFET P-CH 30V 26A/80A 8HSOP
$3.10
Available to order
Reference Price (USD)
1+
$3.10000
500+
$3.069
1000+
$3.038
1500+
$3.007
2000+
$2.976
2500+
$2.945
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with RS1E260ATTB1 by Rohm Semiconductor, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, RS1E260ATTB1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.1mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
Related Products
onsemi
NTTFS1D8N02P1E
onsemi
NTGS3441T1
IXYS
IXTA180N10T-TRL
Infineon Technologies
IPB80P03P4L04ATMA1
Microchip Technology
MSC040SMA120J
onsemi
NVMYS2D1N04CLTWG
Toshiba Semiconductor and Storage
TK4R4P06PL,RQ
Infineon Technologies
IPD90N08S405ATMA1
Microchip Technology
APT10045LLLG
STMicroelectronics