SI8802DB-T2-E1
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 8V 4MICROFOOT
$0.56
Available to order
Reference Price (USD)
3,000+
$0.15972
6,000+
$0.15004
15,000+
$0.14036
30,000+
$0.12874
75,000+
$0.12390
Exquisite packaging
Discount
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Discover SI8802DB-T2-E1, a versatile Transistors - FETs, MOSFETs - Single solution from Vishay Siliconix, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 54mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
- Vgs (Max): ±5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-Microfoot
- Package / Case: 4-XFBGA
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