SIHF9Z24STRR-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CHANNEL 60V
$1.13
Available to order
Reference Price (USD)
1+
$1.13000
500+
$1.1187
1000+
$1.1074
1500+
$1.0961
2000+
$1.0848
2500+
$1.0735
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with SIHF9Z24STRR-GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SIHF9Z24STRR-GE3 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 6.6A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Rohm Semiconductor
RSS060P05FRATB
Alpha & Omega Semiconductor Inc.
AOT414
Vishay Siliconix
IRFBF20PBF
Vishay Siliconix
SI3442BDV-T1-E3
Infineon Technologies
BSS159NH6327XTSA2
Rectron USA
RM2309E
Infineon Technologies
SPD50N03S2L
Infineon Technologies
IRFS3107TRL7PP
Alpha & Omega Semiconductor Inc.
AOB409L
Toshiba Semiconductor and Storage