SIR122LDP-T1-RE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 80-V (D-S) MOSFET POWE
$1.29
Available to order
Reference Price (USD)
1+
$1.29000
500+
$1.2771
1000+
$1.2642
1500+
$1.2513
2000+
$1.2384
2500+
$1.2255
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with SIR122LDP-T1-RE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SIR122LDP-T1-RE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 62.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.35mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
onsemi
NVMFS5C404NWFAFT3G
onsemi
FCPF20N60
onsemi
NTLUS4930NTAG
Texas Instruments
CSD18537NQ5A
Microchip Technology
TP2510N8-G
Nexperia USA Inc.
PMZ600UNEYL
Vishay Siliconix
SIHF540S-GE3
Rectron USA
RM60N100DF
Vishay Siliconix
SI8483DB-T2-E1
Rohm Semiconductor