SIR624DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 200V 18.6A PPAK SO-8
$1.26
Available to order
Reference Price (USD)
3,000+
$0.56908
6,000+
$0.54236
15,000+
$0.52328
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SIR624DP-T1-GE3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SIR624DP-T1-GE3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 7.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL3415A-F2-0000HF
Fairchild Semiconductor
FQI8N60CTU
IXYS
IXTQ96N25T
Panjit International Inc.
PJP60R290E_T0_00001
STMicroelectronics
STP42N65M5
onsemi
2SK937Y5
onsemi
NTBGS3D5N06C
IXYS
IXTH13N80
STMicroelectronics
STP24NF10
Infineon Technologies