SISA18BDN-T1-GE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 30 V (D-S) MOSFET POWE
$0.73
Available to order
Reference Price (USD)
1+
$0.73000
500+
$0.7227
1000+
$0.7154
1500+
$0.7081
2000+
$0.7008
2500+
$0.6935
Exquisite packaging
Discount
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Enhance your circuit performance with SISA18BDN-T1-GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SISA18BDN-T1-GE3 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 36.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8PT
- Package / Case: 8-PowerWDFN
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