SQJQ112ER-T1_GE3
Vishay Siliconix
Vishay Siliconix
AUTOMOTIVE N-CHANNEL 100 V (D-S)
$4.05
Available to order
Reference Price (USD)
1+
$4.05000
500+
$4.0095
1000+
$3.969
1500+
$3.9285
2000+
$3.888
2500+
$3.8475
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SQJQ112ER-T1_GE3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SQJQ112ER-T1_GE3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 600W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 8 x 8
- Package / Case: 8-PowerSMD, Gull Wing
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Vishay Siliconix