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SSM3K62TU,LXHF

Toshiba Semiconductor and Storage
SSM3K62TU,LXHF Preview
Toshiba Semiconductor and Storage
SMOS LOW RON NCH VDSS:20V ID:0.8
$0.41
Available to order
Reference Price (USD)
1+
$0.41000
500+
$0.4059
1000+
$0.4018
1500+
$0.3977
2000+
$0.3936
2500+
$0.3895
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Rds On (Max) @ Id, Vgs: 57mOhm @ 800mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Lead

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