TK7R0E08QM,S1X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
UMOS10 TO-220AB 80V 7MOHM
$1.38
Available to order
Reference Price (USD)
1+
$1.38000
500+
$1.3662
1000+
$1.3524
1500+
$1.3386
2000+
$1.3248
2500+
$1.311
Exquisite packaging
Discount
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Discover TK7R0E08QM,S1X, a versatile Transistors - FETs, MOSFETs - Single solution from Toshiba Semiconductor and Storage, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 87W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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