TSM13ND50CI
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 500V 13A ITO220
$1.84
Available to order
Reference Price (USD)
1+
$1.76000
50+
$1.41900
100+
$1.27710
500+
$0.99330
1,000+
$0.82302
2,500+
$0.79464
Exquisite packaging
Discount
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Optimize your electronic systems with TSM13ND50CI, a high-quality Transistors - FETs, MOSFETs - Single from Taiwan Semiconductor Corporation. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, TSM13ND50CI provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 480mOhm @ 3.3A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1877 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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