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TSM6502CR RLG

Taiwan Semiconductor Corporation
TSM6502CR RLG Preview
Taiwan Semiconductor Corporation
MOSFET N/P-CH 60V 24A/18A 8PDFN
$2.48
Available to order
Reference Price (USD)
2,500+
$0.26825
5,000+
$0.25900
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
  • Power - Max: 40W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PDFN (5x6)

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