XPN9R614MC,L1XHQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 40V 40A 8TSON
$1.47
Available to order
Reference Price (USD)
1+
$1.47000
500+
$1.4553
1000+
$1.4406
1500+
$1.4259
2000+
$1.4112
2500+
$1.3965
Exquisite packaging
Discount
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XPN9R614MC,L1XHQ by Toshiba Semiconductor and Storage is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, XPN9R614MC,L1XHQ ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Vgs (Max): +10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 840mW (Ta), 100W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
- Package / Case: 8-PowerVDFN
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