DMN2600UFB-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 25V 1.3A 3DFN
$0.39
Available to order
Reference Price (USD)
3,000+
$0.07098
6,000+
$0.06240
15,000+
$0.05382
30,000+
$0.05096
75,000+
$0.04810
150,000+
$0.04238
Exquisite packaging
Discount
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Experience the power of DMN2600UFB-7, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, DMN2600UFB-7 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 70.13 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 540mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X1-DFN1006-3
- Package / Case: 3-UFDFN
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