FII30-06D
IXYS
IXYS
IGBT H BRIDGE 600V 30A I4PAK5
$0.00
Available to order
Reference Price (USD)
25+
$10.08160
Exquisite packaging
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Maximize energy efficiency with FII30-06D IGBT transistor arrays from IXYS. Specially designed for traction systems, plasma generators, and high-frequency converters, these components feature: parallel operation capability, positive temperature coefficient, and avalanche ruggedness. IXYS delivers cutting-edge solutions for demanding power control challenges. Get customized recommendations by submitting your requirements!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Power - Max: 100 W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
- Current - Collector Cutoff (Max): 600 µA
- Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac™-5
- Supplier Device Package: ISOPLUS i4-PAC™