IGB10N60TATMA1
Infineon Technologies
Infineon Technologies
IGBT 600V 20A 110W TO263-3
$1.85
Available to order
Reference Price (USD)
1,000+
$0.80175
2,000+
$0.74646
5,000+
$0.73724
Exquisite packaging
Discount
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The IGB10N60TATMA1 Single IGBT from Infineon Technologies delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. Infineon Technologies's commitment to innovation ensures IGB10N60TATMA1 meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: NPT, Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
- Power - Max: 110 W
- Switching Energy: 430µJ
- Input Type: Standard
- Gate Charge: 62 nC
- Td (on/off) @ 25°C: 12ns/215ns
- Test Condition: 400V, 10A, 23Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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