IPP70N10S312AKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 70A TO220-3
$0.85
Available to order
Reference Price (USD)
1+
$1.93000
10+
$1.74500
100+
$1.40180
500+
$1.09032
1,000+
$0.90341
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPP70N10S312AKSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPP70N10S312AKSA1 inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V
- Vgs(th) (Max) @ Id: 4V @ 83µA
- Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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