IRF6668TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 55A DIRECTFET MZ
$2.32
Available to order
Reference Price (USD)
4,800+
$0.73931
9,600+
$0.72380
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with IRF6668TRPBF by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IRF6668TRPBF ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 4.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET™ MZ
- Package / Case: DirectFET™ Isometric MZ
Related Products
Rectron USA
RM110N150HD
Toshiba Semiconductor and Storage
TK6R8A08QM,S4X
Rectron USA
RM15N650T2
Rohm Semiconductor
R6524KNX3C16
Vishay Siliconix
SIHH240N60E-T1-GE3
Infineon Technologies
IRFR3303TRPBF
Taiwan Semiconductor Corporation
TSM80N400CF C0G
Vishay Siliconix
SIB406EDK-T1-GE3
Nexperia USA Inc.
BUK9M9R1-40EX
onsemi