ISC0702NLSATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 23A/135A TDSON-8
$1.81
Available to order
Reference Price (USD)
1+
$1.81000
500+
$1.7919
1000+
$1.7738
1500+
$1.7557
2000+
$1.7376
2500+
$1.7195
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with ISC0702NLSATMA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, ISC0702NLSATMA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 135A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 38µA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 100W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
Related Products
Fairchild Semiconductor
HUFA76413D3ST
Infineon Technologies
IRFS3307TRLPBF
Nexperia USA Inc.
PMV25ENEAR
IXYS
IXTH30N60P
Vishay Siliconix
SI7463DP-T1-GE3
Infineon Technologies
SPD07N60C3ATMA1
Taiwan Semiconductor Corporation
TSM2N60ECP ROG
Vishay Siliconix
SUM60N10-17-E3
Infineon Technologies
IRF60DM206
Renesas Electronics America Inc