RGT50NS65DGTL
Rohm Semiconductor
Rohm Semiconductor
IGBT
$3.51
Available to order
Reference Price (USD)
1+
$3.51000
500+
$3.4749
1000+
$3.4398
1500+
$3.4047
2000+
$3.3696
2500+
$3.3345
Exquisite packaging
Discount
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Enhance your electronic designs with RGT50NS65DGTL Single IGBTs from Rohm Semiconductor, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. Rohm Semiconductor's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 48 A
- Current - Collector Pulsed (Icm): 75 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
- Power - Max: 194 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 49 nC
- Td (on/off) @ 25°C: 27ns/88ns
- Test Condition: 400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): 58 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: LPDS
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