IXA40PG1200DHG-TRR
IXYS
IXYS
IGBT H BRIDGE 1200V 63A SMPD
$15.58
Available to order
Reference Price (USD)
1+
$15.57835
500+
$15.4225665
1000+
$15.266783
1500+
$15.1109995
2000+
$14.955216
2500+
$14.7994325
Exquisite packaging
Discount
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The IXA40PG1200DHG-TRR by IXYS represents next-generation IGBT array technology for mission-critical applications. From medical imaging equipment to smart grid infrastructure, these transistors provide: ultra-low switching losses, high junction temperature operation, and gate charge optimization. Choose IXYS for semiconductors that outperform in harsh environments. Our technical team awaits your inquiry!
Specifications
- Product Status: Active
- IGBT Type: PT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 63 A
- Power - Max: 230 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
- Current - Collector Cutoff (Max): 150 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 9-SMD Module
- Supplier Device Package: ISOPLUS-SMPD™.B
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